semiconductors summary v (br)dss = 100v : r ds(on) = 0.7 i d = 0.8a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? sot23 package applications ? dc-dc converters ? power management functions ? disconnect switches ? motor control device marking ? 7n1 ZXMN10A07F issue 5 - july 2003 100v n-channel enhancement mode mosfet 1 top view pinout sot23 device reel size tape width quantity per reel ZXMN10A07Fta 7? 8mm 3000 units ZXMN10A07Ftc 13? 8mm 10000 units ordering information
ZXMN10A07F semiconductors issue 5 - july 2003 2 parameter symbol limit unit drain-source voltage v dss 100 v gate-source voltage v gs 20 v continuous drain current @ v gs =10v; t a =25c (b) @v gs =10v; t a =70c (b) @v gs =10v; t a =25c (a) i d 0.8 0.6 0.7 a pulsed drain current (c) i dm 3.5 a continuous source current (body diode) (b) i s 0.5 a pulsed source current (body diode) (c) i sm 3.5 a power dissipation at t a =25c (a) linear derating factor p d 625 5 mw mw/c power dissipation at t a =25c (b) linear derating factor p d 806 6.4 mw mw/c operating and storage temperature range t j ;t stg -55 to +150 c absolute maximum ratings parameter symbol v alue unit junction to ambient (a) r ja 200 c/w junction to ambient (b) r ja 155 c/w thermal resistance notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 5 secs. (c) repetitive rating 25mm x 25mm fr4 pcb, d=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph.
characteristics ZXMN10A07F semiconductors issue 5 - july 2003 3
ZXMN10A07F semiconductors issue 5 - july 2003 4 parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 100 v i d =250 a, v gs =0v zero gate voltage drain current i dss 1 av ds =100v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 2.0 4.0 v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.7 0.9 v gs =10v, i d =1.5a v gs =6v, i d =1a forward transconductance (1) (3) g fs 1.6 s v ds =15v,i d =1a dynamic (3) input capacitance c iss 138 pf v ds =50v,v gs =0v, f=1mhz output capacitance c oss 12 pf reverse transfer capacitance c rss 6pf switching (2) (3) turn-on delay time t d(on) 1.8 ns v dd =50v, i d =1a r g =6.0 ,v gs =10v rise time t r 1.5 ns turn-off delay time t d(off) 4.1 ns fall time t f 2.1 ns total gate charge q g 2.9 nc v ds =50v,v gs =10v, i d =1a gate-source charge q gs 0.7 nc gate-drain charge q gd 1nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s =1.5a, v gs =0v reverse recovery time (3) t rr 27 ns t j =25c, i s =1.8a, di/dt=100a/ s reverse recovery charge (3) q rr 12 nc electrical characteristics (at tamb = 25c unless otherwise stated) notes (1) measured under pulsed conditions. pulse width 300 s; duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMN10A07F semiconductors issue 5 - july 2003 5 typical characteristics
typical characteristics ZXMN10A07F semiconductors issue 5 - july 2003 6
ZXMN10A07F semiconductors europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2003 issue 5 - july 2003 7 package outline pad layout dim millimetres inches dim millimetres inches min max min max min max min max a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c 1.10 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom 10 typ 10 typ package dimensions controlling dimensions in millimetres approx conversions inches.
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